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1 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 figure 1. package type of ap2218 to-220f-4 general description the ap2218 is a low dropout linear regulator with a typical dropout of 300mv at 1a output current. the ap2218 provides current limit and thermal shut- down. on-chip thermal shutdown provides protection against any combination of high current and ambient temperature that would cr eate excessive junction tem- peratures. the ap2218 has 3.3v and 5.0v versions. the ap2218 is available in the industry standard to- 220f-4 package. features minimum guaranteed output current: 1a dropout voltage at i out =1a: 300mv output accuracy: 1% low ground current internal current limit and thermal protection reversed-battery and reversed-lead insertion protection fast transient response applications power module set top box lcd tv pdp tv cordless phone
2 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 4 en gnd t package (to-220f-4) 3 v out pin configuration 2 1 v in figure 2. pin configuration of ap2218 (top view) pin description pin number pin name function 1v in unregulated input. 2v out regulated output. 3 gnd ground pin. this pin and tab are internally connected. 4 en logic high enable input.
3 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 functional block diagram figure 3. functional block diagram of ap2218 16v thermal shutdown reference + - v in v out gnd 1.24v en 4 3 2 1 ordering information package circuit type t: to-220f-4 ap2218 - 3.3: fixed output 3.3v blank: tin lead e1: lead free 5.0: fixed output 5.0v
4 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at th ese or any other conditions beyond those indicated under "recommended operating condi tions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter symbol value unit supply voltage v in 15 v maximum operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 300 o c esd (machine model) 350 v esd (human body model) 2000 v absolute maximum ratings (note 1) package temperature range part number marking id package type tin lead lead free tin lead lead free to-220f-4 -40 to 125 o c ap2218t-3.3 ap2218t-3.3e1 ap2218t-3.3 ap2218t-3.3e1 tube ap2218t-5.0 ap2218t-5.0e1 ap2218t-5.0 ap2218t-5.0e1 tube recommended oper ating conditions parameter symbol min max unit supply voltage v in 8 v operating junction temperature t j -40 125 o c bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. ordering information (continued)
aug. 2005 rev. 1. 0 1a low dropout linear regulator ap2218 preliminary datasheet 1a low dropout linear regulator ap2218 5 bcd semiconductor manufacturing limited parameter symbol condition min typ max unit output voltage v out i out =10ma 3.27 3.3 3.33 v 10ma i out 1 a, 4.3v v in 6.3v (note 2) 3.23 3.37 v line regulation v rline i out =10ma, 4.3v v in 8v 3.3 33 mv load regulation v rload v in =4.3v, 10ma i out 1a 6.6 50 mv output voltage temperature coefficient ? v out / ? ti out =10ma 66 330 v/ o c dropout voltage (note 3) v drop ? v out =1% i out =100ma 70 200 mv i out =1a 300 550 mv ground current i gnd v in =4.3v i out =750ma 6 15 ma i out =1a 10 ma current limit i limit v out =0v (note 4) 1.5 2.2 a minimum load current i load(min) 15ma output noise voltage (rms) 10hz to 100khz, i out =100ma, c out =10 f 400 v enable input enable input voltage v en logic low (off) 0.8 v logic high (on) 2.25 v enable input current i in v en =2.25v 1 15 30 75 a v en =0.8v 2 4 a shutdown output current i out(shdn) (note 5) 10 20 a electrical characteristics ap2218-3.3v electri cal characteristics note 2: for the details of v in range, please refer to (v in -v out )*i load maximum power dissipation ( figure 4). note 3: dropout voltage is defined as the input-to-output differential when the output voltage drops to 99% of its nominal valu e which is measured at v out +1v applied to v in . note 4: v in =v out(nominal) +1v. note 5: v en 0.8v, v in 8v, v out =0v. operating conditions: v in =4.3v, c in =10 f , c out =10 f , t j =25 o c, unless otherwise specified. the boldface applies over -40 o c t j 125 o c. (p maximum power dissipation.)
6 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 electrical characteristics (continued) parameter symbol condition min typ max unit output voltage v out i out =10ma 4.95 5.0 5.05 v 10ma i out 1 a, 6v v in 8v (note 2) 4.90 5.10 v line regulation v rline i out =10ma, 6v v in 8v 550mv load regulation v rload v in =6v, 10ma i out 1a 10 75 mv output voltage temperature coefficient ? v out / ? t i out =10ma 100 500 v/ o c dropout voltage (note 3) v drop ? v out =1% i out =100ma 70 200 mv i out =1a 300 550 mv ground current i gnd v in =6v i out =750ma 6 15 ma i out =1a 10 ma current limit i limit v out =0v (note 4) 1.5 2.2 a minimum load current i load(min) 15 ma output noise voltage (rms) 10hz to 100khz, i out =100ma, c out =10 f 400 v enable input enable input voltage v en logic low (off) 0.8 v logic high (on) 2.25 v enable input current i in v en =2.25v 1 15 30 75 a v en =0.8v 2 4 a shutdown output current i out(shdn) (note 5) 10 20 a ap2218-5.0v electri cal characteristics operating conditions: v in =6v, c in =10 f , c out =10 f , t j =25 o c, unless otherwise specified. the boldface applies over -40 o c t j 125 o c. (p maximum power dissipation.) note 2: for the details of v in range, please refer to (v in -v out )*i load maximum power dissipation ( figure 4). note 3: dropout voltage is defined as the input-to-output differential when the output voltage drops to 99% of its nominal valu e which is measured at v out +1v applied to v in . note 4: v in =v out(nominal) +1v. note 5: v en 0.8v, v in 8v, v out =0v.
7 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 typical performance characteristics figure 4. power dissipation vs. ambient temperature figure 6. ground current vs. supply voltage figure 7. ground current vs. ambient temperature -40-20 0 20406080100120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 heatsink size: 45*43 mm 2 power dissipation (w) ambient temperature ( o c) -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 ground current (ma) ambient temperature( o c) i out =100ma i out =750ma i out =1a 02468101214 0 2 4 6 8 10 12 14 16 18 20 ground current (ma) supply voltage (v) ap2218-3.3v i out =100ma i out =750ma i out =1a 1234567891011 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 peak output current (a) v in -v out differential voltage (v) t case =25 o c figure 5. peak output current vs. v in -v out differential voltage
8 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 0 250 500 750 1000 1250 0 2 4 6 8 10 12 14 16 18 v in =v out +1v ground current (ma) output current (ma) figure 8. ground current vs. output current figure 9. dropout voltage vs. ambient temperature -40 -20 0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400 450 dropout voltage (mv) ambient temperature ( o c) i out =250ma i out =500ma i out =1a 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 450 dropout voltage (mv) output current (ma) figure 10. dropout voltage vs. output current figure 11. output voltage vs. ambient temperature -40 -20 0 20 40 60 80 100 120 4.986 4.988 4.990 4.992 4.994 4.996 4.998 5.000 5.002 5.004 5.006 5.008 5.010 output voltage (v) ambient temperature ( o c) v in =6v i out =10ma ap2218-5.0v typical performance ch aracteristics (continued)
9 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 typical performance ch aracteristics (continued) figure 12. dropout characteristics 012345678910111213 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 input voltage (v) output voltage (v) i out =10ma i out =1a ap2218-5.0v figure 13. output voltage vs. enable voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 output voltage (v) enable voltage (v) ap2218-5.0v figure 15. load transient output voltage output current v in =v out +1v c in =10 f, c out =10 f figure 14. power supply rejection ratio 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 psrr (db) frequence (hz) v in =6v i out =10ma c in =10 f c out =10 f
10 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 typical performance ch aracteristics (continued) figure 16. line transient i out =10ma c in =10 f, c out =10 f input voltage output voltage
aug. 2005 rev. 1. 0 1a low dropout linear regulator ap2218 preliminary datasheet 1a low dropout linear regulator ap2218 11 bcd semiconductor manufacturing limited figure 17. typical application of ap2218 typical application v in =6v en gnd c in c out v out =5v v in v out 1 2 4 3 10 f 10 f ap2218-5.0 enable shutdown
12 aug. 2005 rev. 1. 0 bcd semiconductor manufacturing limited preliminary datasheet 1a low dropout linear regulator ap2218 mechanical dimensions to-220f-4 unit: mm(inch) 9.800(0.386) 10.200(0.402) 3.300(0.130) 3.500(0.138) 4.300(0.169) 4.700(0.185) 5.000(0.197)ref 3.500(0.138)ref 15.400(0.606) 15.800(0.622) 1.500(0.059) 10.400(0.409) 3.300(0.130) 10.000(0.394) 10.600(0.417) 0.500(0.020) 0.700(0.028) 3-1.050(0.041)min 3-1.300(0.051)max 1.190(0.047)ref 2.540(0.100)typ 7.620(0.300) ref 1.190(0.047)ref 1.250(0.049) min 1.500(0.059)max 5 5 1.000(0.039) 2.600(0.102) 3.000(0.118) 15.500(0.610) 15.900(0.626) 5 5 4 5 6.300(0.248) 6.700(0.264) 5 5 5 1.000(0.039) 13.600(0.535) ref 0.450(0.018) 0.600(0.024) 1.300(0.051) 1.700(0.067) 3.500(0.138)ref 1.900(0.075) 10.050(0.396) ref 3-r0.250(0.010) 3.000(0.118) 3.400(0.134) 1.500(0.059) dp0.100(0.004) 3- 1.500(0.059) dp0.100(0.004) 3- 4-r0.250(0.010) ref 3.500(0.138)ref 3.500(0.138)ref o o o
8f, b zone, 900 yi shan road, shanghai 200233, prc tel: +86-21-6495 9539, fax: +86-21- 6485 9673 bcd semiconductor (tai wan) company limited 4f, 298-1 rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656-2808, fax: +886-2-2 656-2806 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further notice to any pro- ducts or specifications herein. bcd se miconductor manufacturing limited does not assume any responsibility for use of any its products for any particular purpose, nor does bcd semiconductor manufacturing limited assume any liability arising out of the application or use of any its products or circuits. bcd semiconductor manufacturing limi- ted does not convey any license under its patent rights or other rights nor the rights of others. http://www.bcdsemi.com bcd semiconductor corporation 3170 de la cruz blvd, suite # 105 santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 63 86 shanghai sim-bcd semiconduc tor manufacturing co., ltd. 800 yi shan road, shanghai 200233, prc tel: +86-21-6485 1491, fax : +86-21-5450 0008 advanced analog circuits (shanghai) corporation

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